Research Article
Laser-Induced Selective Metallization on Aluminum Nitride for Fine Line Circuits
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1 Department of Chemical and Materials Engineering, National Ilan University; Yilan City, 260007, Taiwan (R.O.C.)* Corresponding Author
Applied Functional Materials, 4(1), March 2024, 1-6, https://doi.org/10.35745/afm2024v04.01.0001
Published: 30 March 2024
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ABSTRACT
The technology of laser direct selective metallization on aluminum nitride substrate was investigated for manufacturing fine line circuits. In laser direct structuring, laser activation and electroless copper plating were used. The feasibility was evaluated by analyzing the sieving, contrast, and fine linewidth patterns, and the results showed that the width of the feasible fine reached 100 μm. A near-field communication (NFC) antenna circuit of the width of 400 μm was fabricated on the aluminum nitride substrate. The measured resonance frequency was close to the NFC specification frequency.
CITATION (APA)
Tsai, H.-B., Lai, S.-Y., Pham, Q.-T., & Wu, H.-T. (2024). Laser-Induced Selective Metallization on Aluminum Nitride for Fine Line Circuits. Applied Functional Materials, 4(1), 1-6. https://doi.org/10.35745/afm2024v04.01.0001