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CURRENT ISSUE

Volume 6, Issue 2, June 2026

Research Article

Properties of the Horizontal Structural P-Type β-Ga₂O₃ Schottky Barrier Diode Fabricated by the Thermal Oxidation of GaN in N₂O Environment

Hangcheng Zhou, Xinping Wang, Weijun Chen, Sufen Wei

Applied Functional Materials, 6(2), June 2026, 1-9, https://doi.org/10.35745/afm2026v06.02.0002

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